Chip Gallery
| Microphotograph | Contents | Process |
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Frequency Divider with 7-Segment LED Decoder (For layout practice. Successfully tested.) |
Mar. 2000 1.2um CMOS Process (2-metal 1-poly-Si) |
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Wide Dynamic Range Photo Detector for Smart Position Sensor Using Log-response and Correlation Circuit (For preliminary test. Successfully tested.) Int. Conf. on Solid State Devices and Materials (SSDM) 2001. |
Oct. 2000 0.6um CMOS Process (3-metal 2-poly-Si) |
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High-sensitivity and Wide-dynamic-range Position Sensor
Using Logarithmic-response and Correlation Circuit (64x64 pixels. Successfully tested.) IEICE Trans. Electronics, World Automation Congress (WAC) 2002. Best Design Award from IEEE Int. Conf. VLSI Design & ASP-DAC. |
Jan. 2001 0.5um CMOS Process (3-metal 2-poly-Si) |
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High-speed and High-accuracy Position Sensor for 3-D Measurement
Using Row Parallel Processing on the Sensor Plane (256x256 pixels. Failed.) |
Jun. 2001 0.6um CMOS Process (3-metal 2-poly-Si) |
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Smart Sensor Architecture for Real-Time High-Resolution Range Finding (128x128 pixels. Successfully tested.) IEEE Trans. Electron Devices, European Solid-State Circuits Conference (ESSCIRC) 2002. |
Jun. 2001 0.6um CMOS Process (3-metal 2-poly-Si) |
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High-Performance Photo Detector for Modulated Lighting (For preliminary test. 16x16 pixels. Successfully tested.) IEEE Sensors Journal, Int. Conf. on Sensors (IEEE SENSORS) 2002. |
Jun. 2001 0.6um CMOS Process (3-metal 2-poly-Si) |
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TEG for Various Photo Detectors, Sensors, Architectures (For preliminary test. Successfully tested.) IEICE Trans. Electronics, Int. Symp. on Circuits and Systems (ISCAS) 2003. |
Aug. 2001 0.35um CMOS Process (3-metal 2-poly-Si) |
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High-Speed Content-Addressable Memory Using Synchronous Hamming Distance Search Circuits (40 bits x 640 words. Failed.) IP Award 2002 |
Sep. 2001 0.13um CMOS Process (5-metal 1-poly-Si) |
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Smart Active Range Finder with the Capability of -18 dB Signal-to-Background Ratio in 48 dB DR (110 x 120 pixels. Successfully tested.) IEEE Journal of Solid-State Circuits, Int. Solid-State Circuits Conf. (ISSCC) 2003. IP Award 2003 |
Nov. 2001 0.6um CMOS Process (3-metal 2-poly-Si) |
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A 375 x 365 3D 1k frame/s Range-Finding Image Sensor
with 394.5 kHz Access Rate and 0.2 Sub-Pixel Accuracy (375 x 365 pixels. Successfully tested.) IEEE Journal of Solid-State Circuits, Int. Solid-State Circuits Conf. (ISSCC) 2004. |
Dec. 2001 0.18um CMOS Process (5-metal 1-poly-Si) |
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CMOS Image Sensor for High-Speed Active Range Finding
Using Column-Parallel Time-Domain ADC and Position Encoder (640 x 480 pixels. Successfully tested.) IEEE Journal of Solid-State Circuits, Symp. on VLSI Circuits. (VLSI Symp.) 2003. Best Design Award from IEEE ASP-DAC 2004. |
Mar. 2002 0.6um CMOS Process (3-metal 2-poly-Si) |
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A High-Speed and Low-Voltage Associative Memory Using Hierarchical Search
With the Capability of Word-Parallel Hamming Distance Ordering (64 bits x 32 words and TEGs. Successfully tested.) IEEE Journal of Solid-State Circuits, Custom Integrated Circuits Conf. (CICC) 2003. |
Jul. 2002 0.18um CMOS Process (5-metal 1-poly-Si.) |
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XGA Real-Time 3-D Image Sensor (1024 x 768 pixels. Successfully tested.) World Automation Congress (WAC) 2004. |
Aug. 2002 0.35um CMOS Process (3-metal 2-poly-Si) |
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Ultra Fast Row-Parallel Position Sensor (448 x 448 pixels.) |
Aug. 2002 0.35um CMOS Process (3-metal 2-poly-Si) |
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A Smart Image Sensor With High-Speed Feeble ID-Beacon Detection
for Augmented Reality System (128 x 128 pixels. Successfully tested.) ITE Journal, European Solid-State Circuits Conference (ESSCIRC) 2003. |
Aug. 2002 0.35um CMOS Process (3-metal 2-poly-Si) |
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A Pixel-Level Color Image Sensor With Efficient Ambient Light
Suppression and TOF Range Finding Using Modulated RGB Flashlight (64 x 64 pixels. Successfully tested.) IEICE Trans. Electronics, Symp. on VLSI Circuits. (VLSI Symp.) 2004. |
Nov. 2002 0.35um CMOS Process (3-metal 2-poly-Si) |
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A Current-Mode 4-Phase Photo Accumulator Using Modulated RGB Flashlight (64 x 64 pixels.) |
Nov. 2002 0.35um CMOS Process (3-metal 2-poly-Si) |
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LED buffers with data registers |
Feb. 2003 0.35um CMOS Process (3-metal 2-poly-Si) |
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High-Speed 3-D Image Sensor with Pixel-Parallel Timing Calibration (176 x 144 pixels.) |
Jun. 2003 0.35um CMOS Process (3-metal 2-poly-Si) |
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TEG of Various Photo Diode Types (For preliminary test.) |
Jun. 2003 0.35um CMOS Process (3-metal 2-poly-Si) |
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A Word-Parallel Digital Associative Engine with
Wide Search Range Based on Manhattan Distance (256 bit x 64 word. Successfully tested.) Custom Integrated Circuits Conf. (CICC) 2004. |
Sep. 2003 0.18um CMOS Process (5-metal 1-poly-Si) |
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XGA Real-Time 3-D Image Sensor (Modified Version: 1024 x 768 pixels.) |
Dec. 2003 0.35um CMOS Process (3-metal 2-poly-Si) |
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Time-of-Flight Range Finder
using Electromagnetic Correlation Photo Detector (Various types.) |
Feb. 2004 0.35um CMOS Process (3-metal 2-poly-Si) |
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High-Speed 3-D Image Sensor with Column-Parallel Timing Calibration (320 x 240 pixels. Two PD types.) |
Jun. 2004 0.35um CMOS Process (3-metal 2-poly-Si) |
The VLSI chips have been designed by Y. Oike and fabricated through VLSI Design and Education Center (VDEC), University of Tokyo in collaboration with Rohm Co., Hitachi Hokkai Semiconductor Ltd., Hitachi Ltd., STARC, Toppan Printing Co., and Dai Nippon Printing Co.
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